Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots
Identifieur interne : 010518 ( Main/Repository ); précédent : 010517; suivant : 010519Spectral engineering of carrier dynamics in In(Ga)As self-assembled quantum dots
Auteurs : RBID : Pascal:01-0031017Descripteurs français
- Pascal (Inist)
- 7867H, 7363K, 7280E, 7361E, 7855C, 7866F, 4265K, 7847, 7220J, 7350G, 6322, 7845, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Point quantique semiconducteur, Conversion fréquence optique, Photoluminescence, Spectre résolution temporelle, Temps relaxation porteur charge, Recombinaison électron trou, Phonon interface, Force oscillateur, Superradiance.
English descriptors
- KwdEn :
- Carrier relaxation time, Electron-hole recombination, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Interface phonons, Optical frequency conversion, Oscillator strengths, Photoluminescence, Semiconductor quantum dots, Superradiance, Time resolved spectra, self-assembly.
Abstract
Time-resolved photoluminescence upconversion with 200 fs resolution is used to investigate the carrier capture, energy relaxation, and radiative recombination in two self-assembled quantum-dot ensembles with distinctly different sizes and energy spectra. When carriers are excited into the wetting layer at low density and low lattice temperature, the relaxation time to the ground state of the larger dots is ∼1 ps, but the corresponding time for the smaller dots with larger energy spacings is ∼7 ps. This, along with the observed temperature dependence, suggests phonon participation in the relaxation process. At low temperatures, the radiative recombination time in the smaller dots is approximately twice that of the larger dots. The reduced oscillator strength in the smaller dots may be due to a reduced electron-hole wave-function overlap in the smaller dots, in addition to a size-dependent super-radiance effect. © 2001 American Institute of Physics.
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Zhang</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Optical Science and Technology Center, Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Optical Science and Technology Center, Department of Physics and Astronomy, University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Deppe, D G" uniqKey="Deppe D">D. G. 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Huffaker</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712-1084</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Cao, C" uniqKey="Cao C">C. Cao</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712-1084</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0031017</idno><date when="2001-01-15">2001-01-15</date><idno type="stanalyst">PASCAL 01-0031017 AIP</idno><idno type="RBID">Pascal:01-0031017</idno><idno type="wicri:Area/Main/Corpus">011E96</idno><idno type="wicri:Area/Main/Repository">010518</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier relaxation time</term><term>Electron-hole recombination</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Interface phonons</term><term>Optical frequency conversion</term><term>Oscillator strengths</term><term>Photoluminescence</term><term>Semiconductor quantum dots</term><term>Superradiance</term><term>Time resolved spectra</term><term>self-assembly</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7867H</term><term>7363K</term><term>7280E</term><term>7361E</term><term>7855C</term><term>7866F</term><term>4265K</term><term>7847</term><term>7220J</term><term>7350G</term><term>6322</term><term>7845</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Semiconducteur III-V</term><term>Point quantique semiconducteur</term><term>Conversion fréquence optique</term><term>Photoluminescence</term><term>Spectre résolution temporelle</term><term>Temps relaxation porteur charge</term><term>Recombinaison électron trou</term><term>Phonon interface</term><term>Force oscillateur</term><term>Superradiance</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Time-resolved photoluminescence upconversion with 200 fs resolution is used to investigate the carrier capture, energy relaxation, and radiative recombination in two self-assembled quantum-dot ensembles with distinctly different sizes and energy spectra. When carriers are excited into the wetting layer at low density and low lattice temperature, the relaxation time to the ground state of the larger dots is ∼1 ps, but the corresponding time for the smaller dots with larger energy spacings is ∼7 ps. This, along with the observed temperature dependence, suggests phonon participation in the relaxation process. At low temperatures, the radiative recombination time in the smaller dots is approximately twice that of the larger dots. 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